10G 1330nm DFB TO
Gettingwin Co., Ltd. specializes in the research, development, production, and sales of semiconductor laser chips, devices, and modules for gas sensing, measurement, and fiber-optic communications, focusing on semiconductor laser gas sensing product solutions. We offer a full range of semiconductor laser products in the 650nm-2350nm wavelength range in bulk, and can customize lasers with wavelengths from 760nm to 2330nm upon request. Laser packages include TO39, TO56, TO60, and 14-pin butterfly packages. Delivery cycle: 2-8 weeks 10Gbps 1330nm DFB TO Model: LV02-DT33-CB2 Application: 10Gbps 1330nm DFB TO in 5G network applications Model: LV02-DT33-CB2 10Gbps 1330nm DFB TO laser chip is designed for high-performance optical communication applications • Storage temperature: -40℃-85℃ • Operating temperature: -5-70℃ • Reverse voltage: maximum 2V • Forward current: maximum 100mA • PD forward current: maximum 10mA • PD reverse voltage: maximum 10V • Threshold current: typical 10mA (25℃) 25mA (85℃) maximum 15mA (25℃) 35mA (85℃) • Forward voltage: typical: 1.2v maximum 1.5v • Slope efficiency: minimum 0.3mW/mA • Side mode suppression ratio: minimum 35dB • Peak wavelength: 1320 1330 1340nm • PD dark current: Maximum 100nA • PD backlight current: Minimum 150uA Maximum: 950uA







