10G 1310nm DFB chip
10G 1310nm DFB semiconductor laser chips utilize AlGaInAs materials, a multi-quantum well structure, and a ridge waveguide process. These single-mode edge-emitting laser chips feature low threshold, high bandwidth, and wide operating temperature. They are primarily used in Ethernet and 4G wireless fronthaul access networks.
Technical attributes
Working temperature: -20-85℃
Threshold current: typical value 8mA
Slope efficiency: >0.35mW/mA
Side mode suppression ratio: >35dB
application
Optical Ethernet
Fiber Optic Communications
4G wireless fronthaul access network
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